BSM75GB120DN2HOSA1 Description
This application specific IGBT utilizes the most advanced Power MESH? technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.
BSM75GB120DN2HOSA1 Features
? Designed for automotive applications and
AEC-Q101 qualified
? Low threshold voltage
? Low on-voltage drop
? High voltage clamping feature
? Logic level gate charge
? ESD gate-emitter protection
? Gate and gate-emitter integrated resistors
BSM75GB120DN2HOSA1 Application
? Automotive ignition
