HGT1N30N60A4D Description
HGT1N30N60A4D is a type of MOS gated high voltage switching device optimized for high-frequency switch mode power supplies. It combines the high input impedance of MOSFETs and the low on-state conduction loss of bipolar transistors. Based on its specific characteristics, the HGT1N30N60A4D IGBT is able to provide optimum performance for many high-voltage switching applications operating at high frequencies where low conduction losses are essential.
HGT1N30N60A4D Features
Package: SOT-227
100kHz operation at 390V, 20A
600V switching SOA capability
Low conduction loss
High input impedance
HGT1N30N60A4D Applications
High voltage switching applications
