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BSM35GP120GBOSA1

  • BSM35GP120GBOSA1 - BSM35GP120GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
  • BSM35GP120GBOSA1 - BSM35GP120GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

BSM35GP120GBOSA1

BSM35GP120GBOSA1

Infineon Technologies

BSM35GP120GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM35GP120GBOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~125°C
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35
ECCN Code EAR99
Terminal Finish MATTE TIN
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count35
JESD-30 Code R-XUFM-X35
Qualification StatusNot Qualified
Number of Elements 7
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 230W
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Current - Collector Cutoff (Max) 500μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 45A
Turn On Time105 ns
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 35A
Turn Off Time-Nom (toff) 390 ns
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 1.5nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:70 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$150.07900$1500.79

BSM35GP120GBOSA1 Product Details

BSM35GP120GBOSA1 Features

Half-bridge

Including fast free-wheeling diodes

Package with insulated metal base plate

RG on,min= 15 Ohm


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