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BSM35GD120DN2

BSM35GD120DN2

BSM35GD120DN2

Infineon Technologies

BSM35GD120DN2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM35GD120DN2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 17
Transistor Element Material SILICON
Operating Temperature150°C TJ
Published 1999
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation280W
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count17
Number of Elements 6
Configuration Three Phase Inverter
Power Dissipation280W
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2.7V
Turn On Time120 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 35A
Turn Off Time-Nom (toff) 450 ns
IGBT Type NPT
NTC ThermistorNo
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2nF @ 25V
VCEsat-Max 3.2 V
Height 17mm
Length 107.5mm
Width 45.5mm
RoHS StatusRoHS Compliant
In-Stock:4809 items

BSM35GD120DN2 Product Details

BSM35GD120DN2 Description

BSM35GD120DN2IGBT is the power semiconductor die, which is the abbreviation of insulated gate bipolar transistor. IGBT power module is the assembly and physical packaging of several IGBT power semiconductor chips in one package.

BSM35GD120DN2Features

? Power module

? 3-phase full-bridge

? Including fast free-wheel diodes

? Package with insulated metal base plate

BSM35GD120DN2 Applications


automotive traction inverters

energy storage systems

uninterruptible power supplies (UPS)

motor drive applications


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