BSM35GD120DN2 Description
BSM35GD120DN2IGBT is the power semiconductor die, which is the abbreviation of insulated gate bipolar transistor. IGBT power module is the assembly and physical packaging of several IGBT power semiconductor chips in one package.
BSM35GD120DN2Features
? Power module
? 3-phase full-bridge
? Including fast free-wheel diodes
? Package with insulated metal base plate
BSM35GD120DN2 Applications
automotive traction inverters
energy storage systems
uninterruptible power supplies (UPS)
motor drive applications