Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BSM100GB170DN2HOSA1

BSM100GB170DN2HOSA1

BSM100GB170DN2HOSA1

Infineon Technologies

BSM100GB170DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM100GB170DN2HOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Operating Temperature150°C TJ
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation1kW
Configuration Half Bridge
Power - Max 1000W
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 145A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 145A
Input Capacitance16nF
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 100A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 16nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:3117 items

BSM100GB170DN2HOSA1 Product Details

BSM100GB170DN2HOSA1 Description


BSM100GB170DN2HOSA1 is a type of IGBT module developed by Infineon Technologies. It is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.



BSM100GB170DN2HOSA1 Features


Energy saving

Convenient installation

Convenient maintenance

Stable heat dissipation



BSM100GB170DN2HOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles

New energy equipment


Get Subscriber

Enter Your Email Address, Get the Latest News