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BSM30GD60DLCE3224

BSM30GD60DLCE3224

BSM30GD60DLCE3224

Infineon Technologies

BSM30GD60DLCE3224 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM30GD60DLCE3224 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 17
Transistor Element Material SILICON
Operating Temperature150°C TJ
Published 2000
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count17
Number of Elements 6
Configuration Single
Power Dissipation135W
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Current - Collector Cutoff (Max) 500μA
Current - Collector (Ic) (Max) 40A
Collector Emitter Saturation Voltage1.95V
Turn On Time39 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Turn Off Time-Nom (toff) 103 ns
IGBT Type NPT
NTC ThermistorNo
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1.3nF @ 25V
VCEsat-Max 2.45 V
RoHS StatusRoHS Compliant
In-Stock:1790 items

BSM30GD60DLCE3224 Product Details

BSM30GD60DLCE3224 Description


The BSM30GD60DLCE3224 is an Infineon Technologies IGBT module.



BSM30GD60DLCE3224 Features


  • Collector-emitter voltage VCES 600 V

  • DC-collector current TC = 25 °C IC 40 A

  • Collector current tP = 1 ms, TC = 70°C ICRM 60 A

  • Total power dissipation TC=25°C, Transistor Ptot 135 W

  • gate-emitter peak voltage VGES +/- 20V V

  • DC forward current IF 3



BSM30GD60DLCE3224 Applications


  • Industrial


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