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IRG5W50HF06A

IRG5W50HF06A

IRG5W50HF06A

Infineon Technologies

IRG5W50HF06A datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG5W50HF06A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 34 Module
Operating Temperature-40°C~150°C TJ
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation260W
Configuration Half Bridge
Power - Max 260W
Input Standard
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 75A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage600V
Input Capacitance2.6nF
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 2.6nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:1648 items

IRG5W50HF06A Product Details

IRG5W50HF06A Description

IRG5W50HF06A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG5W50HF06A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

IRG5W50HF06A Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG5W50HF06A Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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