BSM25GD120DN2E3224BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM25GD120DN2E3224BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
17
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
17
JESD-30 Code
R-XUFM-X17
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
200W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
800μA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
35A
Turn On Time
140 ns
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 25A
Turn Off Time-Nom (toff)
450 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
1.65nF @ 25V
RoHS Status
ROHS3 Compliant
In-Stock:124 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$87.21200
$872.12
BSM25GD120DN2E3224BOSA1 Product Details
BSM25GD120DN2E3224BOSA1 Description
BSM25GD120DN2E3224BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. BSM25GD120DN2E3224BOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 35A. The BSM25GD120DN2E3224BOSA1 has 3 pins and it is available in Module packaging way. BSM25GD120DN2E3224BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
BSM25GD120DN2E3224BOSA1 Features
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Current - Collector (Ic) (Max): 35A
Current - Collector Cutoff (Max): 800μA
Voltage - Collector Emitter Breakdown (Max): 1200V
Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
BSM25GD120DN2E3224BOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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