FF150R12YT3BOMA1 Description
FF150R12YT3BOMA1 is a 1200v IGBT-module. The transistor FF150R12YT3BOMA1 can be applied in Communications equipment, Wireless Infrastructure, Industrial, Lighting, Enterprise systems, and Datacenter & enterprise computing applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP20R06KL4BOMA1 is in the tray package with 625W Power dissipations.
FF150R12YT3BOMA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C : 200A
Repetitive peak collector current Tp = 1 ms: 300A
Total power dissipation Tc = 25°C: 625W
Gate-emitter peak voltage: ±20V
FF150R12YT3BOMA1 Applications
Communications equipment
Wireless infrastructure
Industrial
Lighting
Enterprise systems
Datacenter & enterprise computing
