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NXH80T120L2Q0SG

NXH80T120L2Q0SG

NXH80T120L2Q0SG

ON Semiconductor

NXH80T120L2Q0SG datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website

SOT-23

NXH80T120L2Q0SG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 50 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case Module
Operating Temperature-40°C~150°C TJ
Published 2015
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation146W
Configuration T-Type
Power - Max 146W
Input Standard
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 65A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance1.99nF
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 80A
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 1.99nF @ 20V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1690 items

NXH80T120L2Q0SG Product Details

NXH80T120L2Q0SG Description

NXH80T120L2Q0SG transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes NXH80T120L2Q0SG MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

NXH80T120L2Q0SG Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

NXH80T120L2Q0SG Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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