BSC022N03SG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BSC022N03SG Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
OptiMOS™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
50A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.8W Ta 104W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.8W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 110μA
Input Capacitance (Ciss) (Max) @ Vds
8290pF @ 15V
Current - Continuous Drain (Id) @ 25°C
28A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
64nC @ 5V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
100A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0033Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
200A
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:4444 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.270821
$0.270821
10
$0.255491
$2.55491
100
$0.241030
$24.103
500
$0.227386
$113.693
1000
$0.214515
$214.515
BSC022N03SG Product Details
BSC022N03SG Description
BSC022N03SG is a 30v OptiMOS?2 Power-Transistor. The Infineon BSC022N03SG can be applied in optimized technology for notebook DC-DC converters due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET BSC022N03SG is in the TDSON-8 package with 2.8W power dissipation.
BSC022N03SG Features
Fast switching MOSFET for SMPS
Optimized technology for notebook DC/DC converters
Qualified according to JEDEC' for target applications
Logic level I N-channel
Excellent gate charge x R Ds(on) product (FOM)
Very low on-resistance R Ds(on)
Superior thermal resistance
Avalanche rated; dv/dt rated
Pb-free lead plating; RoHS compliant
BSC022N03SG Applications
Notebook DC/DC converters
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator
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