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BG5120KE6327HTSA1

BG5120KE6327HTSA1

BG5120KE6327HTSA1

Infineon Technologies

MOSFET N-CH DUAL 8V 20MA SOT-363

SOT-23

BG5120KE6327HTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 6-VSSOP, SC-88, SOT-363
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Voltage - Rated 8V
Additional FeatureLOW NOISE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating20mA
Frequency 800MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration COMPLEX
Operating ModeDUAL GATE, DEPLETION MODE
Current - Test 10mA
Transistor Application AMPLIFIER
Transistor Type 2 N-Channel (Dual)
Gain 23dB
Drain Current-Max (Abs) (ID) 0.02A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure1.1dB
Voltage - Test 5V
RoHS StatusRoHS Compliant
In-Stock:4264 items

About BG5120KE6327HTSA1

The BG5120KE6327HTSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH DUAL 8V 20MA SOT-363.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BG5120KE6327HTSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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