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BG3130E6327HTSA1

BG3130E6327HTSA1

BG3130E6327HTSA1

Infineon Technologies

MOSFET N-CH DUAL 8V SOT-363

SOT-23

BG3130E6327HTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 6-VSSOP, SC-88, SOT-363
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2005
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Voltage - Rated 8V
Additional FeatureLOW NOISE
Terminal FormGULL WING
Current Rating25mA
Frequency 800MHz
Base Part Number BG3130
JESD-30 Code R-PDSO-G6
Number of Elements 2
Operating ModeDUAL GATE, DEPLETION MODE
Current - Test 14mA
Transistor Application AMPLIFIER
Transistor Type 2 N-Channel (Dual)
Gain 24dB
Drain Current-Max (Abs) (ID) 0.025A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure1.3dB
Voltage - Test 5V
RoHS StatusRoHS Compliant
In-Stock:1938 items

About BG3130E6327HTSA1

The BG3130E6327HTSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH DUAL 8V SOT-363.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BG3130E6327HTSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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