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BG 3230 E6327

BG 3230 E6327

BG 3230 E6327

Infineon Technologies

MOSFET N-CH DUAL 8V SOT-363

SOT-23

BG 3230 E6327 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 6-VSSOP, SC-88, SOT-363
Surface MountYES
PackagingTape & Reel (TR)
Published 2005
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 8V
Subcategory FET General Purpose Power
Current Rating (Amps) 25mA
Reach Compliance Code unknown
Frequency 800MHz
Operating Temperature (Max) 150°C
Configuration Single
Operating ModeENHANCEMENT MODE
Transistor Type 2 N-Channel (Dual)
Gain 24dB
Drain Current-Max (Abs) (ID) 0.025A
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.2W
Noise Figure1.3dB
Voltage - Test 5V
RoHS StatusRoHS Compliant
In-Stock:1888 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.334960$13.33496
10$12.580151$125.80151
100$11.868067$1186.8067
500$11.196290$5598.145
1000$10.562537$10562.537

About BG 3230 E6327

The BG 3230 E6327 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH DUAL 8V SOT-363.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BG 3230 E6327, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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