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BC 847BF E6327

BC 847BF E6327

BC 847BF E6327

Infineon Technologies

BC 847BF E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 847BF E6327 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case SOT-723
Surface MountYES
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2008
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Base Part Number BC847
Configuration Single
Power - Max 250mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Power Dissipation-Max (Abs) 0.25W
In-Stock:1031 items

BC 847BF E6327 Product Details

BC 847BF E6327 Overview


In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.

BC 847BF E6327 Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA

BC 847BF E6327 Applications


There are a lot of Infineon Technologies BC 847BF E6327 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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