APT13003HZTR-G1 Overview
This device has a DC current gain of 13 @ 500mA 2V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.When VCE saturation is 400mV @ 250mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 9V can result in a high level of efficiency.A breakdown input voltage of 465V volts can be used.Supplier device package TO-92 comes with the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.The maximum collector current is 1.5A volts.
APT13003HZTR-G1 Features
the DC current gain for this device is 13 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
the supplier device package of TO-92
APT13003HZTR-G1 Applications
There are a lot of Diodes Incorporated APT13003HZTR-G1 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
