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BAT15099E6433HTMA1

BAT15099E6433HTMA1

BAT15099E6433HTMA1

Infineon Technologies

Schottky - 2 Independent 0.35pF @ 0V 1MHz 150°C TJ 4 Terminations SILICON DUAL Tape & Reel (TR) TO-253-4, TO-253AA

SOT-23

BAT15099E6433HTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Contact PlatingTin
Mount Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4
Diode Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated DC 4V
Terminal Position DUAL
Terminal FormGULL WING
Current Rating110mA
Base Part Number BAT15-099
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Max Current Rating 110mA
Power Dissipation-Max 100mW
Diode Type Schottky - 2 Independent
Case Connection CATHODE
Forward Current110mA
Forward Voltage410mV
Max Repetitive Reverse Voltage (Vrrm) 4V
Capacitance @ Vr, F 0.35pF @ 0V 1MHz
Frequency Band X B
Diode Capacitance-Max 0.35pF
Type of Schottky Barrier LOW BARRIER
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9081 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.314116$0.314116
10$0.296336$2.96336
100$0.279563$27.9563
500$0.263738$131.869
1000$0.248809$248.809

BAT15099E6433HTMA1 Product Details

BAT15099E6433HTMA1 Overview


RF diode is recommended that the system's forward voltage is kept above 410mV.For this part, the current rating is 110mA.

BAT15099E6433HTMA1 Features




BAT15099E6433HTMA1 Applications


There are a lot of Infineon Technologies
BAT15099E6433HTMA1 applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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