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JANS1N5550US

JANS1N5550US

JANS1N5550US

Microsemi

Waffle

SOT-23

JANS1N5550US Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 220
Peak Reverse Repetitive Voltage (V) 200
Maximum Continuous Forward Current (A) 5
Peak Non-Repetitive Surge Current (A) 100
Peak Forward Voltage (V) 1.2@9A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name MELF
Supplier Package B-MELF
Mounting Surface Mount
Package Height 2.16(Max)
Package Length 4.95(Max)
Package Width 2.16(Max)
PCB changed 2
PackagingWaffle
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusRoHS non-compliant
In-Stock:107 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$91.80000$91.8
500$90.882$45441
1000$89.964$89964
1500$89.046$133569
2000$88.128$176256
2500$87.21$218025

JANS1N5550US Product Details

JANS1N5550US Overview


In the datasheets, 1.2@9A is stated as the peak forward voltage.A continuous forward current of 5 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 220.

JANS1N5550US Features


the forward peak voltage is 1.2@9A


JANS1N5550US Applications


There are a lot of Microsemi
JANS1N5550US applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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