Name: AUIRLR3410
Brand: Infineon Technologies
SKU: AUIRLR3410
Price: 1.15000 USD
Availability: InStock

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AUIRLR3410

Manufacturer part number:AUIRLR3410

Manufacturer:Infineon Technologies

Description:AUIRLR3410 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRLR3410 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	39 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	79W
Case Connection	DRAIN
Turn On Delay Time	7.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	105m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 5V
Rise Time	53ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	17A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	60A
Height	2.3876mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

AUIRLR3410 Product Details

AUIRLR3410 Description

AUIRLR3410 is a type of HEXFET? power MOSFET developed by Infineon Technologies for low on-resistance per silicon area. It is designed utilizing advanced planar technology. High flexibility and reliability can be ensured based on its fast switching speed, ruggedized device design, and logic-level gate drive. All these features enable this device to be well suited for automotive and other applications.