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C3M0075120D

C3M0075120D

C3M0075120D

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Tube 90mOhm @ 20A, 15V +19V, -8V 1350pF @ 1000V 54nC @ 15V 1200V TO-247-3

SOT-23

C3M0075120D Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Series C3M™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 113.6W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 15V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) +19V, -8V
In-Stock:524 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$14.673593$14.673593
10$13.843012$138.43012
100$13.059445$1305.9445
500$12.320232$6160.116
1000$11.622860$11622.86

C3M0075120D Product Details

C3M0075120D Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1350pF @ 1000V.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (15V).

C3M0075120D Features


a 1200V drain to source voltage (Vdss)


C3M0075120D Applications


There are a lot of Cree/Wolfspeed
C3M0075120D applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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