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AUIRFS4115

AUIRFS4115

AUIRFS4115

Infineon Technologies

AUIRFS4115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRFS4115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2015
Series HEXFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRFS4115
Power Dissipation-Max 375W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.1m Ω @ 62A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5270pF @ 50V
Current - Continuous Drain (Id) @ 25°C 99A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 99A
RoHS StatusROHS3 Compliant
In-Stock:4151 items

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AUIRFS4115 Product Details

AUIRFS4115 Description


AUIRFS4115 is a type of HEXFET? power MOSFET provided by Infineon Technologies based on the latest processing techniques. It is able to provide low on-state resistance per silicon area, advanced switching performance, and improved repetitive avalanche rating. Based on its specific characteristics, power MOSFET AUIRFS4115 is well suited for automotive applications and a wide variety of other applications.



AUIRFS4115 Features


  • Advanced processing techniques

  • Low on-state resistance per silicon area

  • Advanced switching performance

  • Improved repetitive avalanche rating

  • Available in the D2Pak package



AUIRFS4115 Applications


  • Automotive applications


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