IRFR024NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFR024NPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1998
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
45W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
370pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
17A
Drain-source On Resistance-Max
0.075Ohm
Pulsed Drain Current-Max (IDM)
68A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
71 mJ
RoHS Status
ROHS3 Compliant
In-Stock:3188 items
IRFR024NPBF Product Details
IRFR024NPBF Description
IRFR024NPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRFR024NPBF is -55??C~175??C TJ and its maximum power dissipation is 45W Tc. IRFR024NPBF has 2 pins and it is available in tube packaging way.
