Name: AUIRFR8401
Brand: Infineon Technologies
SKU: AUIRFR8401
Availability: InStock

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AUIRFR8401

Manufacturer part number:AUIRFR8401

Manufacturer:Infineon Technologies

Description:AUIRFR8401 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRFR8401 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	D-Pak
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Base Part Number	IRFR8401
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Power Dissipation	79W
Turn On Delay Time	7.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.25mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	3.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	34ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	3.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Input Capacitance	2.2nF
Drain to Source Resistance	4.25mOhm
Rds On Max	4.25 mΩ
Nominal Vgs	2.2 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

AUIRFR8401 Product Details

AUIRFR8401 Description

This HEXFET? Power MOSFETs, which is specifically made for automotive applications, makes use of cutting-edge processing processes to provide low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.