IRFPS3810 Description
International Rectifier's HEXFET Power MOSFET uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications.
IRFPS3810 Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRFPS3810 Applications
provides designers with an extremely efficient and reliable device for use in a variety of applications.