AUIRF7739L2TR Description
AUIRF7739L2TR combines the latest automotive HEXFET power MOSFET silicon technology with advanced DirectFET packaging to achieve the lowest on-resistance in a DPAK (TO-252AA) package with a form factor of only 0.7 mm. The DirectFET package is compatible with existing layout geometry used in power applications, printed circuit board assembly equipment and gas phase, infrared or convection soldering technologies, as long as the manufacturing method and process instructions in the AN-1035 application instructions are followed. The DirectFET package allows double-sided cooling to maximize the heat transfer of the automotive power system. This HEXFET power MOSFET is designed for applications that require efficiency and power density. The combination of advanced DirectFET packaging platforms with the latest silicon technology enables AUIRF7739L2TR to provide significant system-level savings and performance improvements, especially in motor-driven, high-frequency DC-DC and ICE, HEV and other heavy-duty applications on EV platforms. The MOSFET adopts the latest technology to achieve QG with low on-resistance and low unit silicon area. Other features of the MOSFET include an operating junction temperature of 175 °C and a high repetitive peak current capability. The combination of these features makes the MOSFET an efficient, rugged and reliable device for high-current automotive applications.
AUIRF7739L2TR Features
Advanced Process Technology ·
Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications ·
Exceptionally Small Footprint and Low Profile ·
High Power Density ·
Low Parasitic Parameters ·
Dual Sided Cooling ·
175°C Operating Temperature ·
Repetitive Avalanche Capability for Robustness and Reliability ·
Lead free, RoHS and Halogen free
AUIRF7739L2TR Applications
high-current automotive applications.
