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PHB110NQ08T,118

PHB110NQ08T,118

PHB110NQ08T,118

Nexperia USA Inc.

MOSFET N-CH 75V 75A D2PAK

SOT-23

PHB110NQ08T,118 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 1997
Series TrenchMOS™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
HTS Code8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 230W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation230W
Case Connection DRAIN
Turn On Delay Time35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 113.1nC @ 10V
Rise Time107ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 183 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage75V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 440A
Avalanche Energy Rating (Eas) 560 mJ
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:6780 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.08000$1.08
500$1.0692$534.6
1000$1.0584$1058.4
1500$1.0476$1571.4
2000$1.0368$2073.6
2500$1.026$2565

About PHB110NQ08T,118

The PHB110NQ08T,118 from Nexperia USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 75V 75A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PHB110NQ08T,118, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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