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AUIRF6218STRL

AUIRF6218STRL

AUIRF6218STRL

Infineon Technologies

AUIRF6218STRL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRF6218STRL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2015
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 250W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 210 mJ
RoHS StatusRoHS Compliant
In-Stock:2721 items

AUIRF6218STRL Product Details

AUIRF6218STRL Description


AUIRF6218STRL is a type of HEXFET? power MOSFET developed by Infineon Technologies for low on-resistance per silicon area utilizing the latest processing techniques. Fast switching speed and ruggedized device design can also be delivered. These features enable this device to be well suited for automotive and other applications.



AUIRF6218STRL Features


  • Low on-resistance per silicon area

  • Latest processing techniques

  • Fast switching speed

  • Ruggedized device design

  • Available in the D2Pak package



AUIRF6218STRL Applications


  • Automotive applications


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