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IPD50R650CEATMA1

IPD50R650CEATMA1

IPD50R650CEATMA1

Infineon Technologies

MOSFET N CH 500V 6.1A PG-TO252

SOT-23

IPD50R650CEATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
Series CoolMOS™ CE
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 69W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 1.8A, 13V
Vgs(th) (Max) @ Id 3.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.1A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
In-Stock:2676 items

About IPD50R650CEATMA1

The IPD50R650CEATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N CH 500V 6.1A PG-TO252.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD50R650CEATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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