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GD25Q80CNIGR

GD25Q80CNIGR

GD25Q80CNIGR

GigaDevice Semiconductor (HK) Limited

Memory IC 4mm mm

SOT-23

GD25Q80CNIGR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-UDFN Exposed Pad
Surface MountYES
Operating Temperature-40°C~85°C TA
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch0.8mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N8
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size8Mb 1M x 8
Memory TypeNon-Volatile
Operating ModeSYNCHRONOUS
Clock Frequency 120MHz
Memory Format FLASH
Memory InterfaceSPI - Quad I/O
Organization 8MX1
Memory Width 1
Write Cycle Time - Word, Page 50μs, 2.4ms
Memory Density 8388608 bit
Parallel/Serial SERIAL
Programming Voltage3.3V
Height Seated (Max) 0.6mm
Length 4mm
Width 3mm
RoHS StatusROHS3 Compliant
In-Stock:2722 items

Pricing & Ordering

QuantityUnit PriceExt. Price

GD25Q80CNIGR Product Details

GD25Q80CNIGR Overview


In terms of its memory type, it can be classified as Non-Volatile. It is supplied votage within Tape & Reel (TR). 8-UDFN Exposed Pad case encloses it. This chip has an 8Mb 1M x 8 size of memory on it, so a lot of data can be stored on it. This device uses a FLASH-format memory, which is of mainstream design. Due to its wide temperature range of -40°C~85°C TA, this device is well suited to a wide range of applications that require high performance. A voltage of 2.7V~3.6V is possible to be applied to the supply. Its recommended mounting type is Surface Mount. The chip is terminated with 8 terminations. The comprehensive working procedure is supported by 1 functions in this part. This ic memory chip is designed to be supplied with 3.3V. In this memory, the clock frequency rotation is within an 120MHz range. Nonvolatile memory arrays require 3.3V programming voltage to change their state.

GD25Q80CNIGR Features


Package / Case: 8-UDFN Exposed Pad

GD25Q80CNIGR Applications


There are a lot of GigaDevice Semiconductor (HK) Limited GD25Q80CNIGR Memory applications.

  • hard disk drive (HDD)
  • graphics card
  • DVD disk buffer
  • personal digital assistants
  • telecommunications
  • data buffer
  • networking
  • printers
  • Cache memory
  • personal computers

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