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GD25Q32CWIGR

GD25Q32CWIGR

GD25Q32CWIGR

GigaDevice Semiconductor (HK) Limited

Memory IC

SOT-23

GD25Q32CWIGR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Operating Temperature-40°C~85°C TA
PackagingTape & Reel (TR)
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Memory Size32Mb 4M x 8
Memory TypeNon-Volatile
Clock Frequency 120MHz
Memory Format FLASH
Memory InterfaceSPI - Quad I/O
Write Cycle Time - Word, Page 50μs, 2.4ms
RoHS StatusROHS3 Compliant
In-Stock:7204 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.649787$0.649787
10$0.613006$6.13006
100$0.578308$57.8308
500$0.545574$272.787
1000$0.514692$514.692

GD25Q32CWIGR Product Details

GD25Q32CWIGR Overview


Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 8-WDFN Exposed Pad case contains it. The chip has an 32Mb 4M x 8 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. It is important to note that the memory has a clock frequency rotation within the range of 120MHz.

GD25Q32CWIGR Features


Package / Case: 8-WDFN Exposed Pad


GD25Q32CWIGR Applications


There are a lot of GigaDevice Semiconductor (HK) Limited
GD25Q32CWIGR Memory applications.


  • cell phones
  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
  • workstations,

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