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EPC2021ENGR

EPC2021ENGR

EPC2021ENGR

EPC

TRANS GAN 80V 60A BUMPED DIE

SOT-23

EPC2021ENGR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-40°C~150°C TJ
PackagingCut Tape (CT)
Published 2012
Series eGaN®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -40°C
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id 2.5V @ 14mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 60A
Input Capacitance1.7nF
Rds On Max 2.5 mΩ
RoHS StatusRoHS Compliant
In-Stock:3188 items

About EPC2021ENGR

The EPC2021ENGR from EPC is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS GAN 80V 60A BUMPED DIE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the EPC2021ENGR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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