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IRFIZ48N

IRFIZ48N

IRFIZ48N

Infineon Technologies

IRFIZ48N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFIZ48N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 1996
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 42W Tc
Operating ModeENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 36A
Drain-source On Resistance-Max 0.016Ohm
Pulsed Drain Current-Max (IDM) 210A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 270 mJ
RoHS StatusNon-RoHS Compliant
In-Stock:3821 items

IRFIZ48N Product Details

IRFIZ48N Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.



IRFIZ48N Features

Advanced Process Technology

Isolated Package

High Voltage Isolation = 2.5KVRMS ?

Sink to Lead Creepage Dist. = 4.8mm

Fully Avalanche Rated


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