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DCX56-13

DCX56-13

DCX56-13

Diodes Incorporated

DCX56-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DCX56-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DCX56
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 200MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 63
Height 1.5mm
Length 4.5mm
Width 2.48mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4049 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.986054$0.986054
10$0.930240$9.3024
100$0.877585$87.7585
500$0.827910$413.955
1000$0.781047$781.047

DCX56-13 Product Details

DCX56-13 Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 200MHz.As a result, it can handle voltages as low as 80V volts.During maximum operation, collector current can be as low as 1A volts.

DCX56-13 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

DCX56-13 Applications


There are a lot of Diodes Incorporated DCX56-13 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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