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ZDX080N50

ZDX080N50

ZDX080N50

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel Bulk 850m Ω @ 4A, 10V ±30V 1120pF @ 25V 23nC @ 10V 500V TO-220-3 Full Pack

SOT-23

ZDX080N50 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Published 2012
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating ModeENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 8A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.85Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 500V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4032 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.35000$1.35
10$1.21000$12.1
100$0.94300$94.3
500$0.77900$389.5

ZDX080N50 Product Details

ZDX080N50 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1120pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 8A.There is a peak drain current of 24A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

ZDX080N50 Features


a continuous drain current (ID) of 8A
based on its rated peak drain current 24A.
a 500V drain to source voltage (Vdss)


ZDX080N50 Applications


There are a lot of ROHM Semiconductor
ZDX080N50 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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