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DMN3190LDW-13

  • DMN3190LDW-13 - DMN3190LDW-13 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website
  • DMN3190LDW-13 - DMN3190LDW-13 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website

DMN3190LDW-13

DMN3190LDW-13

Diodes Incorporated

DMN3190LDW-13 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website

SOT-23

DMN3190LDW-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Max Power Dissipation320mW
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count6
Reference Standard AEC-Q101
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Turn On Delay Time4.5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 87pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V
Rise Time8.9ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 15.6 ns
Turn-Off Delay Time 30.3 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.19Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:17450 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.50000$0.5
500$0.495$247.5
1000$0.49$490
1500$0.485$727.5
2000$0.48$960
2500$0.475$1187.5

DMN3190LDW-13 Product Details

DMN3190LDW-13 Description


The DMN3190LDW-13 is a Dual N-Channel Enhancement mode MOSFET.



DMN3190LDW-13 Features


  • Low On-Resistance

  • Low Input Capacitance

  • Fast Switching Speed

  • ESD Protected Gate



DMN3190LDW-13 Applications


  • Motor Control

  • Power Management Functions

  • Load Switch


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