DMG1016UDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website
SOT-23
DMG1016UDW-7 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
750mOhm
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
DMG1016UDW
Pin Count
6
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
330mW
Turn On Delay Time
5.1 ns
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
450m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.07A 845mA
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 4.5V
Rise Time
7.4ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
12.3 ns
Turn-Off Delay Time
26.7 ns
Continuous Drain Current (ID)
-845mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
6V
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Height
1.1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:16416 items
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Quantity
Unit Price
Ext. Price
DMG1016UDW-7 Product Details
DMG1016UDW-7 Description
The DMG1016UDW-7 is a new generation MOSFET designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
