Name: NDB603AL
Brand: ON Semiconductor
SKU: NDB603AL
Price: 0.30000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-65°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1998
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	50W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 15V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
RoHS Status	Non-RoHS Compliant

NDB603AL Product Details

NDB603AL Description

NDB603AL is a 30v N-Channel Logic Level Enhancement Mode Field Effect Transistor. The onsemi NDB603AL is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. The NDB603AL is particularly suited for low voltage applications such as DC/DC converters and high-efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB603AL Features

25A, 30 V. RDS(ON) = 0.022? @ VGS = 10 V
Critical DC electrical parameters are specified at elevated temperatures.
The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High-density cell design for extremely low RDS(ON)
175°C maximum junction temperature rating.