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B2100-13-F

B2100-13-F

B2100-13-F

Diodes Incorporated

B2100-13-F datasheet pdf and Diodes - Rectifiers - Single product details from Diodes Incorporated stock available on our website

SOT-23

B2100-13-F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Number of Pins 2
Weight 92.986436mg
Diode Element Material SILICON
PackagingTape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -65°C
Additional FeatureLOW POWER LOSS, FREE WHEELING DIODE
Capacitance 75pF
Subcategory Rectifier Diodes
Voltage - Rated DC 100V
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
Current Rating2A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number B2100
Pin Count2
Number of Elements 1
Polarity Standard
Element ConfigurationSingle
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 7μA @ 100V
Output Current2A
Voltage - Forward (Vf) (Max) @ If 790mV @ 2A
Forward Current2A
Operating Temperature - Junction -65°C~150°C
Application EFFICIENCY
Forward Voltage790mV
Max Reverse Voltage (DC) 100V
Average Rectified Current2A
Number of Phases 1
Peak Reverse Current7μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Capacitance @ Vr, F 75pF @ 4V 1MHz
Peak Non-Repetitive Surge Current 50A
Reverse Voltage100V
Max Forward Surge Current (Ifsm) 50A
Max Junction Temperature (Tj) 150°C
Height 2.5mm
Length 4.57mm
Width 3.94mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15691 items

Pricing & Ordering

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B2100-13-F Product Details

B2100-13-F Description


B2100-13-F is a 2A high-voltage Schottky barrier rectifier. The Schottky Diode is a type of semiconductor diode that can be used in a variety of wave shaping, switching, and rectification applications the same as any other junction diode. The main advantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.



B2100-13-F Features


Schottky Barrier Chip

Guard Ring Die Construction for Transient Protection

Low Power Loss, High Efficiency

Surge Overload Rating to 50A Peak

For Use in Low Voltage, High-Frequency Inverters, Free Wheeling, and Polarity Protection Applications

High-Temperature Soldering: +260°C/10 Second at Terminal

Lead-Free Finish; RoHS Compliant

Halogen and Antimony Free. “Green” Device



B2100-13-F Applications


Communications equipment

Broadband fixed line access

Industrial

Test & Measurement

Personal electronics

PC & notebooks


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