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5962F1120101VXA

5962F1120101VXA

5962F1120101VXA

Cypress Semiconductor

Memory IC 25mm mm

SOT-23

5962F1120101VXA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Number of Terminations 165
ECCN Code 9A515.E
HTS Code8542.32.00.41
Technology CMOS
Terminal Position BOTTOM
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch1.27mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-CBGA-X165
Qualification StatusQualified
Operating Temperature (Max) 125°C
Operating Temperature (Min) -55°C
Supply Voltage-Max (Vsup) 1.9V
Temperature GradeMILITARY
Supply Voltage-Min (Vsup) 1.7V
Operating ModeSYNCHRONOUS
Organization 4MX18
Memory Width 18
Memory Density 75497472 bit
Screening Level MIL-PRF-38535 Class V
Access Time (Max) 0.85 ns
Parallel/Serial PARALLEL
Memory IC Type QDR SRAM
Total Dose 300k Rad(Si) V
Length 25mm
Height Seated (Max) 5.38mm
Width 21mm
RoHS StatusNon-RoHS Compliant
In-Stock:3978 items

5962F1120101VXA Product Details

5962F1120101VXA Overview


On the chip, there are 165 terminations that are planted. The part supports at least 1 functions to ensure a comprehensive working process. In order to function properly, this ic memory chip should be powered by a voltage of 1.8V. This chip has the memory IC type QDR SRAM. Only use it above 125°C. The part is designed to operate at a temperature of -55°C, in any other case, it would malfunction.

5962F1120101VXA Features




5962F1120101VXA Applications


There are a lot of Cypress Semiconductor
5962F1120101VXA Memory applications.


  • servers
  • supercomputers
  • telecommunications
  • workstations,
  • DVD disk buffer
  • data buffer
  • nonvolatile BIOS memory
  • Camcorders
  • embedded logic
  • eDRAM

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