CG2H30070F

CG2H30070F Description

The CG2H30070F is a Radar Product, CW & Pulsed. The GaN HEMT devices from Wolfspeed are excellent for CW and pulsed applications. The L, S, C, and X-Band applications are catered for by the packed discrete GaN HEMT devices. The L, C, S, and X bands are intended for use with the GaN HEMT MMIC 50-ohm amplifiers. We have a large selection of high-efficiency GaN HEMT transistors and amplifiers in our portfolio that operate at 28 V, 40 V, and 50 V for pulsed-through CW applications.

CG2H30070F Features

• High power density

• High-frequency operation

• High breakdown voltage

• GaN-on-SiC technology

• Wide-band performance

• Reduction of heat-sink requirements

• SiC substrate provides the best thermal performance

• High reliability

• Higher efficiency

CG2H30070F Applications

• GaN HEMT Transistors & MMICs for L, S, C and X-Band Applications