PBSS3540E,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 100mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.The device exhibits a collector-emitter breakdown at 40V.
PBSS3540E,115 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 500mA
a transition frequency of 300MHz
PBSS3540E,115 Applications
There are a lot of NXP USA Inc. PBSS3540E,115 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
