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2N3964

2N3964

2N3964

Central Semiconductor

1 Elements 3 Terminations SILICON TO-18 Bulk

SOT-23

2N3964 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-18
Transistor Element Material SILICON
PackagingBulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureLOW NOISE
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBCY-W3
Qualification StatusNot Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Polarity PNP
Power Dissipation-Max 360mW
Element ConfigurationSingle
Gain Bandwidth Product40MHz
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
Collector Emitter Breakdown Voltage45V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage250mV
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 6V
hFE Min 250
DC Current Gain-Min (hFE) 250
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4410 items

2N3964 Product Details

2N3964 Overview


The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 40MHz.In extreme cases, the collector current can be as low as 200mA volts.

2N3964 Features


a collector emitter saturation voltage of 250mV
the emitter base voltage is kept at 6V
a transition frequency of 40MHz


2N3964 Applications


There are a lot of Central Semiconductor
2N3964 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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