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CEN-U57

CEN-U57

CEN-U57

Central Semiconductor

1 Elements 3 Terminations SILICON TO-202 Bulk

SOT-23

CEN-U57 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-202
Transistor Element Material SILICON
PackagingBulk
Published 2012
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.75
Subcategory Other Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation-Max 1.75W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 350mV
Max Collector Current 2A
Collector Emitter Breakdown Voltage100V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage500mV
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 4V
hFE Min 20
DC Current Gain-Min (hFE) 20
RoHS StatusRoHS Compliant
In-Stock:2008 items

CEN-U57 Product Details

CEN-U57 Overview


Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.The emitter base voltage can be kept at 4V for high efficiency.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

CEN-U57 Features


a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 4V
a transition frequency of 50MHz


CEN-U57 Applications


There are a lot of Central Semiconductor
CEN-U57 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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