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NE5550279A-T1-A

NE5550279A-T1-A

NE5550279A-T1-A

CEL

FET RF 30V 900MHZ 79A

SOT-23

NE5550279A-T1-A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4
Supplier Device Package 79A
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated 30V
Current Rating (Amps) 600mA
Current Rating600mA
Frequency 900MHz
Base Part Number NE5550
Current - Test 40mA
Transistor Type LDMOS
Continuous Drain Current (ID) 600mA
Gate to Source Voltage (Vgs) 6V
Gain 22.5dB
Power - Output 33dBm
Voltage - Test 7.5V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:2839 items

NE5550279A-T1-A Product Details

The CEL Transistors - FETs, MOSFETs - RF NE5550279A-T1-A is a high-performance FET designed for RF applications. It features a 30V drain-source voltage rating and a 900MHz frequency rating, making it suitable for a wide range of applications. The 79A drain current rating ensures that it can handle high power levels, while the low on-resistance of 0.0045 ohms ensures low power dissipation. The device is also RoHS compliant, making it an environmentally friendly choice. With its high performance and reliability, the CEL Transistors - FETs, MOSFETs - RF NE5550279A-T1-A is an ideal choice for RF applications.

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