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NE5550279A-A

NE5550279A-A

NE5550279A-A

CEL

FET RF 30V 900MHZ 79A

SOT-23

NE5550279A-A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4
Supplier Device Package 79A
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated 30V
Current Rating (Amps) 600mA
Current Rating600mA
Frequency 900MHz
Base Part Number NE5550
Current - Test 40mA
Transistor Type LDMOS
Continuous Drain Current (ID) 600mA
Gate to Source Voltage (Vgs) 6V
Gain 22.5dB
Power - Output 33dBm
Voltage - Test 7.5V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:4602 items

NE5550279A-A Product Details

The CEL Transistors - FETs, MOSFETs - RF NE5550279A-A is a high-performance FET designed for RF applications. It features a 30V drain-source voltage rating and a 900MHz frequency rating, making it ideal for use in high-frequency applications. The 79A drain current rating ensures that it can handle high power levels, while the low gate-source capacitance ensures minimal signal distortion. This FET is also designed for low noise operation, making it suitable for use in sensitive applications. With its high performance and reliable operation, the CEL Transistors - FETs, MOSFETs - RF NE5550279A-A is an excellent choice for RF applications.

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