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NE3515S02-T1D-A

NE3515S02-T1D-A

NE3515S02-T1D-A

CEL

RF JFET Transistors Super Low Noise Pseudomorphic

SOT-23

NE3515S02-T1D-A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case 4-SMD, Flat Leads
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature125°C
Max Power Dissipation165mW
Current Rating88mA
Frequency 12GHz
Current - Test 10mA
Drain to Source Voltage (Vdss) 4V
Transistor Type HFET
Continuous Drain Current (ID) 88mA
Gate to Source Voltage (Vgs) -3V
Gain 12.5dB
Power - Output 14dBm
Noise Figure0.3dB
Voltage - Test 2V
RoHS StatusRoHS Compliant
In-Stock:9679 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.67000$0.67
500$0.6633$331.65
1000$0.6566$656.6
1500$0.6499$974.85
2000$0.6432$1286.4
2500$0.6365$1591.25

About NE3515S02-T1D-A

The NE3515S02-T1D-A from CEL is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF JFET Transistors Super Low Noise Pseudomorphic.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NE3515S02-T1D-A, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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