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NE3210S01

NE3210S01

NE3210S01

CEL

RF JFET Transistors Super Lo Noise HJFET

SOT-23

NE3210S01 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Package / Case 4-SMD
Number of Pins 1
PackagingStrip
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature125°C
Min Operating Temperature -65°C
Additional FeatureHIGH RELIABILITY
Max Power Dissipation165mW
Terminal Position RADIAL
Terminal FormGULL WING
Current Rating15mA
Frequency 12GHz
Pin Count4
JESD-30 Code O-PRDB-G4
Number of Elements 1
Configuration SINGLE
Operating ModeDEPLETION MODE
Power Dissipation165mW
Case Connection SOURCE
Current - Test 10mA
Drain to Source Voltage (Vdss) 4V
Polarity/Channel Type N-CHANNEL
Transistor Type HFET
Continuous Drain Current (ID) 70mA
Gate to Source Voltage (Vgs) -3V
Gain 13.5dB
Drain to Source Breakdown Voltage 4V
FET Technology HETERO-JUNCTION
Noise Figure0.35dB
Voltage - Test 2V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:1883 items

About NE3210S01

The NE3210S01 from CEL is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF JFET Transistors Super Lo Noise HJFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NE3210S01, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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