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2SC3583-T1B-A

2SC3583-T1B-A

2SC3583-T1B-A

CEL

RF Bipolar Transistors NPN High Frequency

SOT-23

2SC3583-T1B-A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation200mW
Power - Max 200mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 65mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 8V
Gain 13dB
Frequency - Transition 9GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
RoHS StatusRoHS Compliant
In-Stock:19883 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.126383$0.126383
10$0.119229$1.19229
100$0.112480$11.248
500$0.106113$53.0565
1000$0.100107$100.107

About 2SC3583-T1B-A

The 2SC3583-T1B-A from CEL is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF Bipolar Transistors NPN High Frequency.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2SC3583-T1B-A, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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