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MT3S111TU,LF

MT3S111TU,LF

MT3S111TU,LF

Toshiba Semiconductor and Storage

RF SIGE NPN BIPOLAR TRANSISTOR N

SOT-23

MT3S111TU,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 12.5dB
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
RoHS StatusRoHS Compliant
In-Stock:12936 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.58000$0.58
500$0.5742$287.1
1000$0.5684$568.4
1500$0.5626$843.9
2000$0.5568$1113.6
2500$0.551$1377.5

About MT3S111TU,LF

The MT3S111TU,LF from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF SIGE NPN BIPOLAR TRANSISTOR N.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MT3S111TU,LF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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