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TIP30B-S

TIP30B-S

TIP30B-S

Bourns Inc.

TIP30B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP30B-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation2W
Base Part Number TIP30
Number of Elements 1
Configuration Single
Power Dissipation30W
Power - Max 2W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage80V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3212 items

TIP30B-S Product Details

TIP30B-S Overview


In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 125mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.When collector current reaches its maximum, it can reach 1A volts.

TIP30B-S Features


the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V

TIP30B-S Applications


There are a lot of Bourns Inc. TIP30B-S applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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